AO4818B 30v dual n-channel mosfet v ds i d (at v gs =10v) 8a r ds(on) (at v gs =10v) <19m w r ds(on) (at v gs = 4.5v) < 26m w symbol v ds v gs v 20 gate-source voltage the AO4818B uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in p wm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g d s g d s g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl -55 to 150 parameter typ max c thermal characteristics w 2 1.3 t a =70c junction and storage temperature range c/w r q ja 48 74 62.5 units maximum junction-to-ambient a v 20 gate-source voltage mj avalanche current c 18 a 19 a 8 6.5 48 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c i d maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 90 40 g d s g d s g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 48 a 15.5 19 t j =125c 21 25 18.5 26 m w g fs 30 s v sd 0.75 1 v i s 2.5 a c iss 600 740 888 pf c oss 77 110 145 pf c rss 50 82 115 pf r g 0.5 1.1 1.7 w q g (10v) 12 15 18 nc q g (4.5v) 6 7.5 9 nc q gs 2.5 nc q gd 3 nc t d(on) 5 ns t 3.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =1.8 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charge total gate charge drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w v gs =0v, v ds =15v, f=1mhz switching parameters forward transconductance diode forward voltage i s =1a,v gs =0v v ds =5v, i d =8a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v gs =4.5v, i d =6a reverse transfer capacitance on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8a t r 3.5 ns t d(off) 19 ns t f 3.5 ns t rr 6 8 10 ns q rr 14 18 22 nc body diode reverse recovery charge i f =8a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w turn-off fall time i f =8a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. www.freescale.net.cn 2/6 AO4818B 30v dual n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6a v gs =10v i d =8a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 10v 3v 4v 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6a v gs =10v i d =8a 10 15 20 25 30 35 40 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =8a 25 c 125 c 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 10v 3v 4v www.freescale.net.cn 3/6 AO4818B 30v dual n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 1 10 100 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10 m s 10ms 0 2 4 6 8 10 0 5 10 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 1 10 100 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10 m s 10ms www.freescale.net.cn 4/6 AO4818B 30v dual n-channel mosfet
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90 c/w 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90 c/w www.freescale.net.cn 5/6 AO4818B 30v dual n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AO4818B 30v dual n-channel mosfet
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